IQE220N15NM5CGSCATMA1 vs IPTC039N15NM5ATMA1 Comparison

Detailed side-by-side comparison of IQE220N15NM5CGSCATMA1 by Infineon and IPTC039N15NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE220N15NM5CGSCATMA1 IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQE220N15NM5CGSCATMA1 IPTC039N15NM5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.18 $4.05
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS 5
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current at Ta (ID) 7 A β€”
Continuous Drain Current at Tc (ID) 44 A β€”
Power Dissipation at Ta (PD) 2.5 W β€”
Power Dissipation at Tc (PD) 100 W β€”
On-Resistance (RDS(on)) 22 milliohm (max) β€”
Gate Threshold Voltage (VGS(th)) 4.6 V β€”
Package PG-WHTFN-9 (Source-Down) PG-HDSOP-16-2 (top-side cooled)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5, Source-Down OptiMOS 5 trench
Operating Temperature Range -55C to +150C (junction) β€”
RoHS Status Compliant Compliant
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Ta β€” 21 A
Continuous Drain Current (ID) at Tc β€” 190 A
Power Dissipation (PD) at Ta β€” 3.8 W
Power Dissipation (PD) at Tc β€” 319 W
On-Resistance RDS(on) typical β€” 3.9 mOhm
Gate Charge Qg typical β€” 74 nC
Maximum Gate-Source Voltage (VGS) β€” 20 V
Operating Temperature β€” -55 C to +175 C (junction)
Cooling β€” Top-side cooled (case above PCB)

Datasheets & Resources

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