IQE220N15NM5CGSCATMA1 vs IQD063N15NM5SCATMA1 Comparison
Detailed side-by-side comparison of IQE220N15NM5CGSCATMA1 by Infineon and IQD063N15NM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE220N15NM5CGSCATMA1
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 β ActiveInfineon
IQD063N15NM5SCATMA1
IQD063N15NM5SCATMA1 - 150V 5.1mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
IQD063N15NM5SCATMA1 β ActiveSpecification Comparison
| Parameter | IQE220N15NM5CGSCATMA1 | IQD063N15NM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.18 | $2.35 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOSβ’ 5 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current at Ta (ID) | 7 A | β |
| Continuous Drain Current at Tc (ID) | 44 A | β |
| Power Dissipation at Ta (PD) | 2.5 W | β |
| Power Dissipation at Tc (PD) | 100 W | β |
| On-Resistance (RDS(on)) | 22 milliohm (max) | β |
| Gate Threshold Voltage (VGS(th)) | 4.6 V | β |
| Package | PG-WHTFN-9 (Source-Down) | PG-WHSON-8-U02 (WHSON-8 with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5, Source-Down | β |
| Operating Temperature Range | -55C to +150C (junction) | -55Β°C to +175Β°C |
| RoHS Status | Compliant | Compliant |
| Continuous Drain Current (ID) at TC=25Β°C | β | 151 A |
| Continuous Drain Current (ID) at TA=25Β°C | β | 14.4 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) at VGS=10V | β | 5.1 mΞ© |
| On-Resistance RDS(on) at VGS=4.5V | β | 6.32 mΞ© (typ) |
| Gate-Source Threshold Voltage (VGS(th)) | β | 3.8 V (max) |
| Total Gate Charge (QG) at VGS=10V | β | 48 nC |
| Input Capacitance (Ciss) | β | 3.6 nF |
| Output Capacitance (Coss) | β | 900 pF |
| Reverse Transfer Capacitance (Crss) | β | 21 pF |
| Maximum Power Dissition (PD) at TC=25Β°C | β | 333 W |
| Maximum Power Dissition (PD) at TA=25Β°C | β | 3 W |