IQE220N15NM5CGSCATMA1 vs IQE008N03LM5SCATMA1 Comparison
Detailed side-by-side comparison of IQE220N15NM5CGSCATMA1 by Infineon and IQE008N03LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE220N15NM5CGSCATMA1
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 β Active
Specification Comparison
| Parameter | IQE220N15NM5CGSCATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.18 | $1.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 150 V | 30 V |
| Continuous Drain Current at Ta (ID) | 7 A | β |
| Continuous Drain Current at Tc (ID) | 44 A | β |
| Power Dissipation at Ta (PD) | 2.5 W | β |
| Power Dissipation at Tc (PD) | 100 W | β |
| On-Resistance (RDS(on)) | 22 milliohm (max) | β |
| Gate Threshold Voltage (VGS(th)) | 4.6 V | 2 V (typical) |
| Package | PG-WHTFN-9 (Source-Down) | PG-WHSON-8 (Source-Down) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5, Source-Down | Trench MOSFET (N-Channel) |
| Operating Temperature Range | -55C to +150C (junction) | -55 Β°C to +150 Β°C |
| RoHS Status | Compliant | Compliant |
| Product Family | β | OptiMOS 5 |
| Continuous Drain Current (ID) | β | 252 A |
| On-Resistance (RDS(on)) max | β | 0.85 mΞ© at VGS = 10 V |
| Gate Drive Voltage | β | 10 V (recommended) |
| Configuration | β | Single N-Channel |
| Cooling Architecture | β | Source-Down, dual-side cooling |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |