IQE220N15NM5CGSCATMA1 vs IQE065N10NM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE220N15NM5CGSCATMA1 by Infineon and IQE065N10NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE220N15NM5CGSCATMA1
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 β ActiveInfineon
IQE065N10NM5CGSCATMA1
IQE065N10NM5CGSCATMA1 - 100V 6.5mOhm N-Ch MOSFET | Infineon
IQE065N10NM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE220N15NM5CGSCATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.18 | $1.28 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 5 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current at Ta (ID) | 7 A | β |
| Continuous Drain Current at Tc (ID) | 44 A | β |
| Power Dissipation at Ta (PD) | 2.5 W | β |
| Power Dissipation at Tc (PD) | 100 W | β |
| On-Resistance (RDS(on)) | 22 milliohm (max) | β |
| Gate Threshold Voltage (VGS(th)) | 4.6 V | [DATA_NEEDED: VGS(th) typical value] |
| Package | PG-WHTFN-9 (Source-Down) | PG-WHTFN-9-1 (Source-Down) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5, Source-Down | OptiMOS 5 trench-gate |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +150 C |
| RoHS Status | Compliant | Compliant |
| Transistor Type | β | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25 C | β | 85 A |
| Continuous Drain Current (ID) at TA | β | 13 A |
| On-Resistance (RDS(on)) max at VGS=10V | β | 6.5 mOhm |
| Power Dissipation at TA | β | 2.5 W |
| Power Dissipation at TC | β | 100 W |
| Lead-Free | β | Yes |