IQEH46NE2LM7UCGSCATMA1 vs IQDH35N03LM5SCATMA1 Comparison

Detailed side-by-side comparison of IQEH46NE2LM7UCGSCATMA1 by Infineon and IQDH35N03LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQEH46NE2LM7UCGSCATMA1

IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 βœ“ Active
Infineon
IQDH35N03LM5SCATMA1

IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon

IQDH35N03LM5SCATMA1 βœ“ Active

Specification Comparison

Parameter IQEH46NE2LM7UCGSCATMA1 IQDH35N03LM5SCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.65 $2.05
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS 7 (trench) OptiMOS 5 (trench, shielded-gate)
Drain-Source Voltage (VDS) 25 V β€”
Continuous Drain Current (ID) at TC 440 A β€”
Continuous Drain Current (ID) at TA 57 A β€”
Power Dissipation at TA 2.5 W β€”
Power Dissipation at TC 150 W β€”
Maximum On-Resistance (RDS(on)) 0.46 mOhm β€”
Gate Threshold Voltage (VGS(th)) 2 V β€”
Package PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin)
Mounting Type Surface Mount Surface Mount
Polarity / Channel Type Single N-Channel β€”
Operating Mode Enhancement-mode β€”
Topology Suitability Hard- and soft-switching β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Drain-Source Voltage (VDS) max β€” 30 V
Gate-Source Voltage (VGS) max β€” Β±20 V
Continuous Drain Current (ID) at Ta β€” 66 A
Pulsed Drain Current (IDM) at Tc β€” 700 A
On-State Resistance (RDS(on)) max β€” 0.35 mOhm @ VGS=10V
Power Dissipation (PD) at Ta β€” 2.5 W
Power Dissipation (PD) at Tc β€” 278 W
Operating Temperature Range β€” -55 C to +175 C
MSL Level β€” 1 (unlimited)
Marking β€” IQDH35N03LM5S

Datasheets & Resources

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