IQEH50NE2LM7UCGSCATMA1 vs BSC014NE2LSIATMA1 Comparison

Detailed side-by-side comparison of IQEH50NE2LM7UCGSCATMA1 by Infineon and BSC014NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQEH50NE2LM7UCGSCATMA1

IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 βœ“ Active
Infineon
BSC014NE2LSIATMA1

BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon

BSC014NE2LSIATMA1 βœ“ Active

Specification Comparison

Parameter IQEH50NE2LM7UCGSCATMA1 BSC014NE2LSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.78 $0.48
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 7 Power-Transistor β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) Max 25 V β€”
Continuous Drain Current (ID) at TA 54 A β€”
Continuous Drain Current (ID) at TC 422 A β€”
RDS(on) Max 0.5 mΞ© β€”
Gate Threshold Voltage (VGS(th)) typ 2 V β€”
Power Dissipation (PD) at TA 2.5 W β€”
Power Dissipation (PD) at TC 150 W β€”
Maximum Junction Temperature 175 Β°C β€”
Package PG-WHTFN-9-1 (surface mount) PG-TDSON-8-7 (SuperSO8)
Mounting Type Surface Mount Surface Mount
Series OptiMOS 7 β€”
Technology Silicon N-Channel Power MOSFET N-Channel MOSFET (OptiMOS 25V)
Drain-Source Voltage (VDS) β€” 25 V
Gate-Source Voltage (VGS) β€” Β±20 V
Continuous Drain Current (ID, Ta) β€” 33 A
Continuous Drain Current (ID, Tc) β€” [DATA_NEEDED: Tc condition rating]
Pulsed Drain Current (IDM, Tc) β€” 100 A
On-State Resistance RDS(on) β€” 1.4 mOhm (typ) at VGS = 10 V
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typ at VGS=10V]
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 74 W
Operating Junction Temperature β€” -55 Β°C to +150 Β°C
MSL Level β€” 1 (per JEDEC J-STD-020)
RoHS Status β€” Compliant
Lead-Free β€” Yes

Datasheets & Resources

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