IQEH50NE2LM7UCGSCATMA1 vs IQD020N10NM5CGATMA1 Comparison

Detailed side-by-side comparison of IQEH50NE2LM7UCGSCATMA1 by Infineon and IQD020N10NM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQEH50NE2LM7UCGSCATMA1

IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 ✓ Active
Infineon
IQD020N10NM5CGATMA1

IQD020N10NM5CGATMA1 - 100V 2.0mΩ OptiMOS™ 5 N-MOSFET | Infineon

IQD020N10NM5CGATMA1 ✓ Active

Specification Comparison

Parameter IQEH50NE2LM7UCGSCATMA1 IQD020N10NM5CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.78 $1.28
Manufacturer Infineon Technologies
Product Family OptiMOS 7 Power-Transistor
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) Max 25 V
Continuous Drain Current (ID) at TA 54 A
Continuous Drain Current (ID) at TC 422 A
RDS(on) Max 0.5 mΩ
Gate Threshold Voltage (VGS(th)) typ 2 V
Power Dissipation (PD) at TA 2.5 W
Power Dissipation (PD) at TC 150 W
Maximum Junction Temperature 175 °C
Package PG-WHTFN-9-1 (surface mount) PG-TTFN-9-U02 (PQFN 5x6 mm²)
Mounting Type Surface Mount Surface Mount
Series OptiMOS 7
Technology Silicon N-Channel Power MOSFET OptiMOS™ 5 N-channel trench MOSFET
Drain-Source Voltage (VDS) 100 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TA=25°C 26 A
Continuous Drain Current (ID) at TC=25°C [DATA_NEEDED: ID at TC=25°C from datasheet curve]
Pulsed Drain Current (IDM) at TC=25°C 273 A
Static Drain-Source On-Resistance RDS(on) max 2.0 mΩ (at VGS=10V)
Power Dissipation (TA) 3 W
Power Dissipation (TC) 333 W
Operating Temperature Range -55°C to +175°C
MSL Level [DATA_NEEDED: MSL rating from datasheet]
RoHS Status Compliant
Qualification Industrial grade (Infineon OptiMOS™ 5 family)

Datasheets & Resources

Browse All Products Create BOM Request Quote