IQEH50NE2LM7UCGSCATMA1 vs IQE050N08NM5CGATMA1 Comparison

Detailed side-by-side comparison of IQEH50NE2LM7UCGSCATMA1 by Infineon and IQE050N08NM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQEH50NE2LM7UCGSCATMA1

IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 βœ“ Active
Infineon
IQE050N08NM5CGATMA1

IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΞ© Source-Down | Infineon

IQE050N08NM5CGATMA1 βœ“ Active

Specification Comparison

Parameter IQEH50NE2LM7UCGSCATMA1 IQE050N08NM5CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.78 $1.75
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 7 Power-Transistor β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) Max 25 V β€”
Continuous Drain Current (ID) at TA 54 A β€”
Continuous Drain Current (ID) at TC 422 A β€”
RDS(on) Max 0.5 mΞ© β€”
Gate Threshold Voltage (VGS(th)) typ 2 V β€”
Power Dissipation (PD) at TA 2.5 W β€”
Power Dissipation (PD) at TC 150 W β€”
Maximum Junction Temperature 175 Β°C β€”
Package PG-WHTFN-9-1 (surface mount) PG-TTFN-9-1 (Surface Mount)
Mounting Type Surface Mount Surface Mount
Series OptiMOS 7 β€”
Technology Silicon N-Channel Power MOSFET OptiMOS 5 (Source-Down)
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (Ta) β€” 16 A
Continuous Drain Current (Tc) β€” 101 A
On-Resistance RDS(on) Max β€” 5.0 mΞ©
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 100 W
Gate Threshold Vgs(th) Typ β€” [DATA_NEEDED: Vgs(th) typical value]
Operating Temperature β€” -55Β°C to +175Β°C (TJ max)
Total Gate Charge Qg Typ β€” [DATA_NEEDED: total gate charge Qg typical]
RoHS Status β€” Compliant
MSL Level β€” [DATA_NEEDED: MSL rating]

Datasheets & Resources

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