IQEH50NE2LM7ZCGATMA1 vs IAUCN08S7L024ATMA1 Comparison
Detailed side-by-side comparison of IQEH50NE2LM7ZCGATMA1 by Infineon and IAUCN08S7L024ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH50NE2LM7ZCGATMA1
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 β ActiveInfineon
IAUCN08S7L024ATMA1
IAUCN08S7L024ATMA1 - 80V 2.4mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L024ATMA1 β ActiveSpecification Comparison
| Parameter | IQEH50NE2LM7ZCGATMA1 | IAUCN08S7L024ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $1.68 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 7 Power-Transistor | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (Vds) Max | 25 V | β |
| Continuous Drain Current (Ta) | 54 A | β |
| Continuous Drain Current (Tc) | 422 A | β |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | β |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 150 W | β |
| Maximum Junction Temperature | +175 degrees C | β |
| Operating Temperature Range | -55 degrees C to +175 degrees C | -55C to +175C (Tj) |
| Package | PG-TTFN-9-3 | PG-TDSON-8-34 (SSO8 5x6 mmΒ²) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | OptiMOSβ’ 7 N-channel trench MOSFET |
| RoHS Status | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | β |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) | β | 177 A (Tj) |
| Continuous Drain Current (Silicon-limited) | β | 150 A |
| On-Resistance RDS(on) max | β | 2.4 mΞ© at VGS=10 V |
| Power Dissipation (PD) | β | 148 W (Tc) |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | β | [DATA_NEEDED: Qg typ] |
| Avalanche Energy Rated | β | Yes (single-pulse) |
| Automotive Qualification | β | AEC-Q101 qualified |
| MSL Level | β | MSL1 (per JEDEC J-STD-020) |