IQEH50NE2LM7ZCGATMA1 vs IQE031N08LM6CGSCATMA1 Comparison
Detailed side-by-side comparison of IQEH50NE2LM7ZCGATMA1 by Infineon and IQE031N08LM6CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 β ActiveInfineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQEH50NE2LM7ZCGATMA1 | IQE031N08LM6CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS 6 (40 V to 100 V) |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vds) Max | 25 V | β |
| Continuous Drain Current (Ta) | 54 A | β |
| Continuous Drain Current (Tc) | 422 A | β |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | β |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 150 W | β |
| Maximum Junction Temperature | +175 degrees C | β |
| Operating Temperature Range | -55 degrees C to +175 degrees C | -55 C to +175 C (junction, typical for OptiMOS 6) |
| Package | PG-TTFN-9-3 | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | β |
| RoHS Status | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | β |
| Drain-to-Source Voltage (VDS max) | β | 80 V |
| Continuous Drain Current (ID) at Ta=25C | β | 18 A |
| Continuous Drain Current (ID) at Tc | β | 127 A |
| Power Dissipation (PD) at Ta=25C | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 125 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) max | β | [DATA_NEEDED: RDS(on) at VGS=10 V] |
| Gate Drive Level | β | Logic-level |
| Avalanche Tested | β | 100% avalanche tested |
| MSL Level | β | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| Lead-Free | β | Yes |