IQEH50NE2LM7ZCGATMA1 vs IQEH46NE2LM7UCGSCATMA1 Comparison
Detailed side-by-side comparison of IQEH50NE2LM7ZCGATMA1 by Infineon and IQEH46NE2LM7UCGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 β ActiveInfineon
IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon
IQEH46NE2LM7UCGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQEH50NE2LM7ZCGATMA1 | IQEH46NE2LM7UCGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $1.65 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 7 Power-Transistor | β |
| Polarity / Channel Type | N-Channel | Single N-Channel |
| Drain-Source Voltage (Vds) Max | 25 V | β |
| Continuous Drain Current (Ta) | 54 A | β |
| Continuous Drain Current (Tc) | 422 A | β |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | β |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 150 W | β |
| Maximum Junction Temperature | +175 degrees C | β |
| Operating Temperature Range | -55 degrees C to +175 degrees C | β |
| Package | PG-TTFN-9-3 | PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | OptiMOS 7 (trench) |
| RoHS Status | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 25 V |
| Continuous Drain Current (ID) at TC | β | 440 A |
| Continuous Drain Current (ID) at TA | β | 57 A |
| Power Dissipation at TA | β | 2.5 W |
| Power Dissipation at TC | β | 150 W |
| Maximum On-Resistance (RDS(on)) | β | 0.46 mOhm |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Operating Mode | β | Enhancement-mode |
| Topology Suitability | β | Hard- and soft-switching |