IQEH50NE2LM7ZCGATMA1 vs IQFH55N04NM6ATMA1 Comparison
Detailed side-by-side comparison of IQEH50NE2LM7ZCGATMA1 by Infineon and IQFH55N04NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH50NE2LM7ZCGATMA1
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 β ActiveInfineon
IQFH55N04NM6ATMA1
IQFH55N04NM6ATMA1 - 40V 451A 0.55mΞ© OptiMOS 6 MOSFET | Infineon
IQFH55N04NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQEH50NE2LM7ZCGATMA1 | IQFH55N04NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $1.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (Vds) Max | 25 V | β |
| Continuous Drain Current (Ta) | 54 A | β |
| Continuous Drain Current (Tc) | 422 A | β |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | β |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 150 W | β |
| Maximum Junction Temperature | +175 degrees C | β |
| Operating Temperature Range | -55 degrees C to +175 degrees C | β |
| Package | PG-TTFN-9-3 | PG-TSON-12-1 (PQFN 8x6 mmΒ², clip-based) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | Trench MOSFET (OptiMOS 6 generation) |
| RoHS Status | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | β |
| Part Family | β | OptiMOS 6 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D) @ TA=25Β°C | β | 53 A |
| Pulsed Drain Current @ TC=25Β°C | β | 451 A |
| Static R_DS(on) (typ) | β | 0.55 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 214 W |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| Gate Charge (Q_G) | β | [DATA_NEEDED: total gate charge] |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| AEC-Q100 | β | [DATA_NEEDED: automotive qualification status] |