IQEH54NE2LM7UCGATMA1 vs IAUCN04S7N019GATMA1 Comparison

Detailed side-by-side comparison of IQEH54NE2LM7UCGATMA1 by Infineon and IAUCN04S7N019GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQEH54NE2LM7UCGATMA1

IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon

IQEH54NE2LM7UCGATMA1 βœ“ Active
Infineon
IAUCN04S7N019GATMA1

IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon

IAUCN04S7N019GATMA1 βœ“ Active

Specification Comparison

Parameter IQEH54NE2LM7UCGATMA1 IAUCN04S7N019GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.95 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor OptiMOS 7
Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 25 V 40 V
Continuous Drain Current (ID) at Ta 52 A β€”
Continuous Drain Current (ID) at Tc 406 A β€”
Power Dissipation at Ta 2.5 W β€”
Power Dissipation at Tc 150 W β€”
Package PG-TTFN-9-3 PG-THSOG-4-1 (SSO4G 5x6 mm)
Mounting Type Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] β€”
On-Resistance (RDS(on)) at 10V VGS [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical in nC] β€”
Operating Temperature Range -55C to +150C (typical MOSFET range) [DATA_NEEDED: junction temperature range from datasheet]
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] β€”
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID, Tj) β€” 147 A
On-Resistance RDS(on) typical β€” 1.95 mOhm
Maximum Power Dissipation (Tc) β€” 81 W
Substrate Compatibility β€” IMS substrates and legacy PCB
Automotive Qualification β€” AEC-Q101 (per family datasheet)
Lead-Free β€” Yes
Tape and Reel Packaging β€” Yes (per ATMA1 suffix)

Datasheets & Resources

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