IQEH54NE2LM7UCGATMA1 vs IQDH29NE2LM5CGSCATMA1 Comparison

Detailed side-by-side comparison of IQEH54NE2LM7UCGATMA1 by Infineon and IQDH29NE2LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQEH54NE2LM7UCGATMA1

IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon

IQEH54NE2LM7UCGATMA1 βœ“ Active
Infineon
IQDH29NE2LM5CGSCATMA1

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΞ© MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQEH54NE2LM7UCGATMA1 IQDH29NE2LM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.95 $1.84
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 7 Power-Transistor β€”
Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at Ta 52 A β€”
Continuous Drain Current (ID) at Tc 406 A β€”
Power Dissipation at Ta 2.5 W β€”
Power Dissipation at Tc 150 W β€”
Package PG-TTFN-9-3 PG-WHTFN-9-U02 (WHTFN EP)
Mounting Type Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] β€”
On-Resistance (RDS(on)) at 10V VGS [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical in nC] β€”
Operating Temperature Range -55C to +150C (typical MOSFET range) β€”
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
FET Type β€” N-Channel
Technology β€” OptiMOS 5 Power-Transistor
Continuous Drain Current (Ta) β€” 75 A
Continuous Drain Current (Tc) β€” 789 A
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 278 W
Maximum On-Resistance RDS(on) β€” 0.29 mΞ©
Gate Threshold Voltage VGS(th) β€” 2 V (typ)
Pin Count β€” 9
Cooling β€” Dual-side exposed pad (top + bottom)

Datasheets & Resources

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