IQEH54NE2LM7UCGATMA1 vs ISC015N06NM5LF2ATMA1 Comparison
Detailed side-by-side comparison of IQEH54NE2LM7UCGATMA1 by Infineon and ISC015N06NM5LF2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH54NE2LM7UCGATMA1
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 β ActiveInfineon
ISC015N06NM5LF2ATMA1
ISC015N06NM5LF2ATMA1 - 60V 1.5mΞ© OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 β ActiveSpecification Comparison
| Parameter | IQEH54NE2LM7UCGATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.95 | $2.21 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 7 Power-Transistor | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (ID) at Ta | 52 A | 32 A |
| Continuous Drain Current (ID) at Tc | 406 A | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 150 W | β |
| Package | PG-TTFN-9-3 | PG-TDSON-8 FL (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 3 V |
| On-Resistance (RDS(on)) at 10V VGS | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical in nC] | 90 nC |
| Operating Temperature Range | -55C to +150C (typical MOSFET range) | β |
| RoHS Status | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Technology | β | OptiMOS 5 Linear FET 2 (N-Channel) |
| Pulsed Drain Current (IDM) at Tc | β | 275 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 217 W |
| On-Resistance RDS(on) max at VGS=10V | β | 1.55 mΞ© |
| On-Resistance RDS(on) at VGS=10V (typ) | β | 1.3 mΞ© |
| Gate-Source Voltage Rating | β | Β±20 V |
| Reverse Recovery Charge (Qrr) | β | 1.3 nC |
| Input Capacitance (Ciss) | β | 6.9 nF |
| Output Capacitance (Coss) | β | 1.3 nF |
| Reverse Transfer Capacitance (Crss) | β | 55 pF |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| RoHS | β | Compliant |