IQEH68NE2LM7UCGATMA1 vs IQE220N15NM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQEH68NE2LM7UCGATMA1 by Infineon and IQE220N15NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 β ActiveInfineon
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQEH68NE2LM7UCGATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.35 | $2.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS 5 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 25 V | 150 V |
| Continuous Drain Current (ID) @ Ta | 47 A | β |
| Pulsed Drain Current (IDM) @ Tc | 338 A | β |
| Power Dissipation (PD) @ Ta | 2.5 W | β |
| Power Dissipation (PD) @ Tc | 130 W | β |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) | β |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (typical for OptiMOS 7) | -55C to +150C (junction) |
| Package | PG-TTFN-9-3 (surface mount) | PG-WHTFN-9 (Source-Down) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL Level] | β |
| RoHS Status | Compliant (per distributor listing) | Compliant |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS 5, Source-Down |
| Packaging | Tape & Reel (per ATMA1 suffix) | β |
| FET Type | β | N-Channel |
| Continuous Drain Current at Ta (ID) | β | 7 A |
| Continuous Drain Current at Tc (ID) | β | 44 A |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 100 W |
| On-Resistance (RDS(on)) | β | 22 milliohm (max) |
| Gate Threshold Voltage (VGS(th)) | β | 4.6 V |