IQEH68NE2LM7UCGATMA1 vs IQEH50NE2LM7UCGSCATMA1 Comparison
Detailed side-by-side comparison of IQEH68NE2LM7UCGATMA1 by Infineon and IQEH50NE2LM7UCGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH68NE2LM7UCGATMA1
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 β ActiveInfineon
IQEH50NE2LM7UCGSCATMA1
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQEH68NE2LM7UCGATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.35 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS 7 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (ID) @ Ta | 47 A | β |
| Pulsed Drain Current (IDM) @ Tc | 338 A | β |
| Power Dissipation (PD) @ Ta | 2.5 W | β |
| Power Dissipation (PD) @ Tc | 130 W | β |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) | β |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) | β |
| Maximum Junction Temperature | 175 Β°C | 175 Β°C |
| Operating Temperature Range | -55 Β°C to +175 Β°C (typical for OptiMOS 7) | β |
| Package | PG-TTFN-9-3 (surface mount) | PG-WHTFN-9-1 (surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL Level] | β |
| RoHS Status | Compliant (per distributor listing) | β |
| Technology | OptiMOS 7 trench MOSFET | Silicon N-Channel Power MOSFET |
| Packaging | Tape & Reel (per ATMA1 suffix) | β |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Drain-Source Voltage (VDS) Max | β | 25 V |
| Continuous Drain Current (ID) at TA | β | 54 A |
| Continuous Drain Current (ID) at TC | β | 422 A |
| RDS(on) Max | β | 0.5 mΞ© |
| Gate Threshold Voltage (VGS(th)) typ | β | 2 V |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 150 W |