IQEH68NE2LM7UCGATMA1 vs IQEH50NE2LM7ZCGATMA1 Comparison
Detailed side-by-side comparison of IQEH68NE2LM7UCGATMA1 by Infineon and IQEH50NE2LM7ZCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH68NE2LM7UCGATMA1
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 β ActiveInfineon
IQEH50NE2LM7ZCGATMA1
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 β ActiveSpecification Comparison
| Parameter | IQEH68NE2LM7UCGATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.35 | $1.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (ID) @ Ta | 47 A | β |
| Pulsed Drain Current (IDM) @ Tc | 338 A | β |
| Power Dissipation (PD) @ Ta | 2.5 W | β |
| Power Dissipation (PD) @ Tc | 130 W | β |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) | β |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) | β |
| Maximum Junction Temperature | 175 Β°C | +175 degrees C |
| Operating Temperature Range | -55 Β°C to +175 Β°C (typical for OptiMOS 7) | -55 degrees C to +175 degrees C |
| Package | PG-TTFN-9-3 (surface mount) | PG-TTFN-9-3 |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL Level] | β |
| RoHS Status | Compliant (per distributor listing) | Compliant |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS 7 (Trench-Gate) |
| Packaging | Tape & Reel (per ATMA1 suffix) | β |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (Vds) Max | β | 25 V |
| Continuous Drain Current (Ta) | β | 54 A |
| Continuous Drain Current (Tc) | β | 422 A |
| Maximum On-Resistance (Rds(on)) | β | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 1.7 V |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 150 W |
| Qualification | β | Industrial grade per Infineon datasheet |