IQEH68NE2LM7UCGATMA1 vs IQEH54NE2LM7UCGATMA1 Comparison
Detailed side-by-side comparison of IQEH68NE2LM7UCGATMA1 by Infineon and IQEH54NE2LM7UCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH68NE2LM7UCGATMA1
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 β ActiveInfineon
IQEH54NE2LM7UCGATMA1
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 β ActiveSpecification Comparison
| Parameter | IQEH68NE2LM7UCGATMA1 | IQEH54NE2LM7UCGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.35 | $1.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) @ Ta | 47 A | β |
| Pulsed Drain Current (IDM) @ Tc | 338 A | β |
| Power Dissipation (PD) @ Ta | 2.5 W | β |
| Power Dissipation (PD) @ Tc | 130 W | β |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) | β |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (typical for OptiMOS 7) | -55C to +150C (typical MOSFET range) |
| Package | PG-TTFN-9-3 (surface mount) | PG-TTFN-9-3 |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant (per distributor listing) | Compliant |
| Technology | OptiMOS 7 trench MOSFET | β |
| Packaging | Tape & Reel (per ATMA1 suffix) | β |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta | β | 52 A |
| Continuous Drain Current (ID) at Tc | β | 406 A |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 150 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance (RDS(on)) at 10V VGS | β | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical in nC] |