IQEH68NE2LM7UCGATMA1 vs ISZ230N10NM6ATMA1 Comparison
Detailed side-by-side comparison of IQEH68NE2LM7UCGATMA1 by Infineon and ISZ230N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH68NE2LM7UCGATMA1
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 β ActiveInfineon
ISZ230N10NM6ATMA1
ISZ230N10NM6ATMA1 - 100V 31A OptiMOS 6 N-MOSFET | Infineon
ISZ230N10NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQEH68NE2LM7UCGATMA1 | ISZ230N10NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.35 | $0.71 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 25 V | 100 V |
| Continuous Drain Current (ID) @ Ta | 47 A | β |
| Pulsed Drain Current (IDM) @ Tc | 338 A | β |
| Power Dissipation (PD) @ Ta | 2.5 W | β |
| Power Dissipation (PD) @ Tc | 130 W | β |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) | β |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (typical for OptiMOS 7) | -55 Β°C to +150 Β°C (junction) |
| Package | PG-TTFN-9-3 (surface mount) | PG-TSDSON-8 FL (3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL Level] | MSL1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant (per distributor listing) | Compliant |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS 6 trench MOSFET |
| Packaging | Tape & Reel (per ATMA1 suffix) | β |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (Ta) | β | 7.7 A |
| Continuous Drain Current (Tc) | β | 31 A |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 48 W |
| On-Resistance RDS(on) at VGS=10V | β | 23 mΞ© (typ, ID=10A) |
| Gate Threshold Voltage VGS(th) | β | 3.3 V (typ at 13 Β΅A) |
| Gate Drive Voltage (recommended) | β | 10 V |
| Family | β | OptiMOS 6 (100V class) |