IR2010SPBF vs IR2109SPBF Comparison

Detailed side-by-side comparison of IR2010SPBF by Infineon and IR2109SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IR2010SPBF

IR2010SPBF - 200V Half-Bridge Gate Driver 3A | Infineon

IR2010SPBF βœ“ Active

Specification Comparison

Parameter IR2010SPBF IR2109SPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.20 $1.05
Configuration Half-Bridge (high + low side) β€”
Number of Drivers 2 (independent high/low-side outputs) 2 (high-side + low-side)
Offset Voltage (max) 200 V β€”
Peak Source/Sink Current 3 A / 3 A β€”
Logic Input Compatibility CMOS or LSTTL, down to 3.0 V β€”
Propagation Delay (typ) 95 ns β€”
Rise / Fall Time (typ) [DATA_NEEDED: rise/fall time] β€”
VCC Supply Voltage (low side) 10 V to 20 V β€”
VB Bootstrap Supply (high side) VCC + 10 V to VCC + 20 V β€”
Operating Temperature -40C to +150C β€”
Shutdown Feature Yes (active input) β€”
Package 16-SOIC (SOIC-16) SOIC-8
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating] β€”
RoHS Status Compliant (Pb-free PBF suffix) Compliant
Drive Technology High-speed power MOSFET / IGBT driver β€”
Channel Matching Matched propagation delays for cross-conduction minimization β€”
Driver Configuration β€” Half-Bridge
High-Side Voltage Tolerance β€” 600 V
Supply Voltage (VCC) β€” 10 V to 20 V
Source Current (typical) β€” 0.2 A
Sink Current (typical) β€” 0.35 A
Turn-On Propagation Delay β€” 150 ns
Turn-Off Propagation Delay β€” 150 ns
Rise Time β€” 200 ns
Fall Time β€” 50 ns
Quiescent VCC Current β€” 1 mA
Input Logic Compatibility β€” 3.3 V / 5 V CMOS / TTL
Undervoltage Lockout β€” Yes (VCC)
Bootstrap Diode β€” Integrated
Operating Junction Temperature β€” -40 C to +150 C

Datasheets & Resources

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