IR2104SPBF vs 2ED2103S06FXUMA1 Comparison
Detailed side-by-side comparison of IR2104SPBF by Infineon and 2ED2103S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IR2104SPBF | 2ED2103S06FXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.94 |
| Function | Half-bridge gate driver | Half-Bridge Gate Driver |
| Number of Drivers | 2 (high-side + low-side) | 2 (high-side + low-side) |
| Configuration | High and Low Side | Non-Inverting |
| Input Type | Logic (non-inverting) | β |
| Maximum Offset / Bootstrap Supply Voltage | 600 V | β |
| Gate Drive Supply Range (VCC) | 10 V to 20 V | β |
| Output Source Current | 130 mA typical | β |
| Output Sink Current | 270 mA typical | β |
| Propagation Delay | 680 ns typical | β |
| Rise Time | 160 ns typical | β |
| Fall Time | 60 ns typical | β |
| Logic Input Compatibility | 3.3 V, 5 V, 15 V CMOS/LSTTL | 3.3 V / 5 V |
| Undervoltage Lockout | Yes (VCC UVLO) | β |
| Deadtime | Internally set | β |
| Cross-Conduction Prevention | Yes | β |
| Operating Temperature Range | -40 C to +125 C | -40C to +125C |
| Package | 8-pin SOIC | PG-DSO-8-69 (DSO-8 with exposed pad) |
| RoHS Status | Compliant (PBF suffix indicates lead-free) | Compliant |
| Technology | β | High-Voltage Level Shift (SOI) |
| Driven Device Type | β | IGBT, N-Channel MOSFET |
| High-Side Offset Voltage (Max) | β | 650 V |
| Bootstrap Voltage (Max) | β | 675 V |
| Supply Voltage (VCC) | β | 10 V to 20 V |
| Source Current (typ.) | β | 0.29 A |
| Sink Current (typ.) | β | 0.7 A |
| Bootstrap Diode | β | Integrated |
| Under-Voltage Lockout (UVLO) | β | Yes (VCC and VBS) |
| Mounting Type | β | Surface Mount |
| MSL Level | β | [DATA_NEEDED: MSL level] |