IR2117SPBF vs IR2117STRPBF Comparison

Detailed side-by-side comparison of IR2117SPBF by Infineon and IR2117STRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IR2117SPBF IR2117STRPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.21 $0.58
Configuration Single high-side driver High-Side Single Channel
Driver Type High-side gate driver (non-inverting) β€”
Number of Drivers 1 β€”
Maximum Offset (Bootstrap) Voltage 600 V β€”
Output Current (Source, typ.) 0.25 A β€”
Output Current (Sink, typ.) 0.5 A β€”
Gate Drive Supply Voltage (VBS) 10 V to 20 V β€”
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] β€”
Input Type CMOS Schmitt-triggered with internal pull-down β€”
Logic Input Polarity Non-inverting β€”
Undervoltage Lockout (UVLO) Yes Yes
Bootstrap Operation Yes (floating channel) β€”
dV/dt Immunity Yes β€”
Negative Transient Tolerance Yes β€”
Package 8-SOIC (SOIC-8) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature -40C to +125C β€”
RoHS Status Compliant (PbF suffix) Compliant
Lead Finish Lead-free (PbF) β€”
Family IR2117 / IR2118 series β€”
Function β€” Gate Driver, Non-Inverting
Input Logic Compatibility β€” CMOS / TTL
Number of Outputs β€” 1
Driven Device β€” N-Channel MOSFET / IGBT
Gate Drive Supply Voltage (VCC) β€” 10 V to 20 V
Floating Channel Offset Voltage β€” up to +600 V
Peak Source Current (IOUT+) β€” 250 mA
Peak Sink Current (IOUT-) β€” 500 mA
Propagation Delay (Ton/Toff) β€” 125 ns (max)
Rise Time β€” 80 ns (typ)
Fall Time β€” 40 ns (typ)
Negative Transient Voltage Tolerance β€” Yes, dV/dt immune
Operating Temperature Range β€” -40 C to +125 C
Package / Case β€” 8-SOIC (0.154 inch / 3.90 mm width)
Lead-Free β€” Yes
MSL Level β€” MSL3 (per JEDEC J-STD-020)

Datasheets & Resources

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