IR21531STRPBF vs IRS2153DSPBF Comparison

Detailed side-by-side comparison of IR21531STRPBF by Infineon and IRS2153DSPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IR21531STRPBF IRS2153DSPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.70 $0.98
Configuration Half-Bridge High-side + low-side driver, half-bridge
Driver Type High-side and Low-side, self-oscillating β€”
Number of Outputs 2 (high-side, low-side) 2 (HO, LO)
Supply Voltage (VCC) 10 V to 20 V β€”
Internal VCC Clamp 15.6 V β€”
High-Side Offset Voltage up to 600 V β€”
Peak Source/Sink Current 250 mA β€”
Rise Time 80 ns β€”
Fall Time 45 ns β€”
Dead-Time 0.6 microseconds (typical) β€”
Oscillator External RC programmable β€”
Bootstrap Diode Integrated β€”
Input Logic CMOS Schmitt-trigger (RC timing) β€”
Operating Temperature -40C to +125C -40 C to +125 C
Package 8-pin SOIC (SO-8) 8-SOIC (SOIC-8)
Mounting Type Surface Mount Surface Mount
Lead Finish Pb-free (PBF suffix) β€”
RoHS Status Compliant (ROHS3) β€”
Function β€” Half-bridge gate driver with RC input oscillator
Maximum Offset Voltage (Voffset) β€” 600 V
VCC Supply Voltage β€” 10 V to 20 V
VBS High-side Supply Voltage β€” VCC + 0.3 V (typical bootstrap)
Gate Drive Source Current (IO+) β€” 130 mA typical
Gate Drive Sink Current (IO-) β€” 270 mA typical
Rise Time (tr) β€” [DATA_NEEDED: tr] (typical ~100 ns)
Fall Time (tf) β€” [DATA_NEEDED: tf] (typical ~50 ns)
Internal Deadtime β€” ~1.2 us
Input Type β€” RC-input oscillator (no external PWM required)
Logic Polarity β€” Inverting / Non-inverting per channel
Undervoltage Lockout β€” Yes (VCC)
Technology β€” HVIC + latch-immune CMOS

Datasheets & Resources

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