IR2304SPBF vs 1EDN7146UXTSA1 Comparison

Detailed side-by-side comparison of IR2304SPBF by Infineon and 1EDN7146UXTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
1EDN7146UXTSA1

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 βœ“ Active

Specification Comparison

Parameter IR2304SPBF 1EDN7146UXTSA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.82
Product Type Half-Bridge Gate Driver IC β€”
Configuration High and Low Side, Independent Channels β€”
Number of Outputs 2 β€”
Maximum Offset (Bootstrap) Voltage 600 V β€”
Gate Drive Supply Voltage (VCC) 10 V to 20 V β€”
Output Source/Sink Current 60 mA / 130 mA β€”
Propagation Delay (Typical) 220 ns β€”
Input Logic Compatibility 3.3 V, 5 V, 15 V β€”
Undervoltage Lockout (UVLO) Both High-Side and Low-Side Channels β€”
Negative Transient Voltage Tolerance Yes (dV/dt immune) β€”
Logic Input Polarity Non-Inverting β€”
Package 8-Pin SOIC (SO-8 N) PG-VSON-1 (6-pin with exposed pad)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -40 C to +125 C -40C to +125C
Technology HVIC + Latch-Immune CMOS, Monolithic β€”
RoHS Status Compliant (Pb-free) Compliant
Driver Type β€” Single-channel high-side TDI gate driver
Maximum Blocking Voltage β€” 200 V
Input Configuration β€” Truly differential (TDI)
Output Current (Source / Sink) β€” 1.5 A / 2.5 A
Propagation Delay β€” [DATA_NEEDED: typical propagation delay ns]
Rise Time β€” [DATA_NEEDED: typical rise time ns]
Fall Time β€” [DATA_NEEDED: typical fall time ns]
Supply Voltage (VCC) β€” [DATA_NEEDED: VCC range V]
Target Transistor β€” GaN SG HEMT or power MOSFET
MSL Level β€” [DATA_NEEDED: MSL rating]
Topology Support β€” Half-bridge, low-side, high-side

Datasheets & Resources

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