IRF1018EPBF vs IPB110P06LMATMA1 Comparison
Detailed side-by-side comparison of IRF1018EPBF by Infineon and IPB110P06LMATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF1018EPBF | IPB110P06LMATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $1.31 |
| FET Type | N-Channel | P-Channel |
| Technology | HEXFET (Power MOSFET) | OptiMOS (trench MOSFET) |
| Drain-Source Voltage (Vdss) | 60 V | β |
| Continuous Drain Current (Id) at Tc=25C | 79 A | β |
| Rds(on) max at Vgs=10V | 8.4 mOhm | β |
| Total Gate Charge (Qg) | 46 nC | β |
| Gate Drive Voltage (Vgs) | 10 V (optimized; +/-20 V max) | β |
| Power Dissipation (Pd) at Tc=25C | 110 W | β |
| Operating Temperature Range | -55 C to +175 C (Tj) | -55 C to +175 C (TJ) |
| Package | TO-220AB (through-hole, 3-lead) | β |
| Mounting Type | Through Hole | Surface Mount |
| Qualification | JEDEC (Industrial market) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free (PBF suffix) | Yes | β |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Drain-Source Voltage (VDS) | β | -60 V |
| Continuous Drain Current (ID) at TC=25C | β | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | β | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | β | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | β | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | β | +/-20 V |
| Package / Case | β | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | β | PG-TO263-3-2 |
| Gate Drive Level | β | Logic-level compatible |
| Lead-Free | β | Yes |