IRF1018EPBF vs IRF1407PBF Comparison
Detailed side-by-side comparison of IRF1018EPBF by Infineon and IRF1407PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF1018EPBF | IRF1407PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.86 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (Power MOSFET) | HEXFET (stripe-planar MOSFET) |
| Drain-Source Voltage (Vdss) | 60 V | β |
| Continuous Drain Current (Id) at Tc=25C | 79 A | β |
| Rds(on) max at Vgs=10V | 8.4 mOhm | β |
| Total Gate Charge (Qg) | 46 nC | β |
| Gate Drive Voltage (Vgs) | 10 V (optimized; +/-20 V max) | β |
| Power Dissipation (Pd) at Tc=25C | 110 W | β |
| Operating Temperature Range | -55 C to +175 C (Tj) | -55 C to +175 C |
| Package | TO-220AB (through-hole, 3-lead) | TO-220AB (through-hole, 3 leads) |
| Mounting Type | Through Hole | Through Hole |
| Qualification | JEDEC (Industrial market) | β |
| RoHS Status | Compliant | β |
| Lead-Free (PBF suffix) | Yes | β |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID) at TC=25C | β | 130 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC=25C | β | 330 W |
| On-Resistance RDS(on) at VGS=10V | β | 7.8 mOhm (typical) |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS threshold typical/min/max] |
| Gate Charge (Qg) | β | 160 nC (typical) |
| Maximum Junction Temperature | β | 175 C |
| Lead-Free / RoHS | β | Lead-free, RoHS compliant (PBF suffix) |
| Avalanche Rating | β | Repetitive avalanche rated |