IRF1018EPBF vs IRFB3207ZPBF Comparison

Detailed side-by-side comparison of IRF1018EPBF by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF1018EPBF IRFB3207ZPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $1.62
FET Type N-Channel β€”
Technology HEXFET (Power MOSFET) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Drain-Source Voltage (Vdss) 60 V β€”
Continuous Drain Current (Id) at Tc=25C 79 A β€”
Rds(on) max at Vgs=10V 8.4 mOhm β€”
Total Gate Charge (Qg) 46 nC β€”
Gate Drive Voltage (Vgs) 10 V (optimized; +/-20 V max) β€”
Power Dissipation (Pd) at Tc=25C 110 W β€”
Operating Temperature Range -55 C to +175 C (Tj) β€”
Package TO-220AB (through-hole, 3-lead) TO-220AB (3-lead through-hole)
Mounting Type Through Hole Through Hole
Qualification JEDEC (Industrial market) β€”
RoHS Status Compliant β€”
Lead-Free (PBF suffix) Yes β€”
Pin Count 3 (Gate, Drain, Source) β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Part Number β€” IRFB3207ZPBF
Series β€” HEXFET
Drain-Source Voltage (VDS) β€” 75 V
Continuous Drain Current (ID) at TC=25C β€” 120 A
Silicon-Limited Drain Current β€” 170 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V β€” 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V β€” 4.1 mOhm
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg β€” [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C β€” 300 W
Operating Junction Temperature β€” -55 C to +175 C
Lead-Free / RoHS β€” Yes (PBF suffix = lead-free)
MSL Level β€” N/A (through-hole)
Avalanche Rated β€” Yes (improved Z-variant ruggedness)

Datasheets & Resources

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