IRF1018EPBF vs IRL3705NPBF Comparison
Detailed side-by-side comparison of IRF1018EPBF by Infineon and IRL3705NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF1018EPBF | IRL3705NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.92 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (Power MOSFET) | HEXFET (planar cell, fifth generation) |
| Drain-Source Voltage (Vdss) | 60 V | β |
| Continuous Drain Current (Id) at Tc=25C | 79 A | β |
| Rds(on) max at Vgs=10V | 8.4 mOhm | β |
| Total Gate Charge (Qg) | 46 nC | β |
| Gate Drive Voltage (Vgs) | 10 V (optimized; +/-20 V max) | β |
| Power Dissipation (Pd) at Tc=25C | 110 W | β |
| Operating Temperature Range | -55 C to +175 C (Tj) | β |
| Package | TO-220AB (through-hole, 3-lead) | TO-220AB (3-pin through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Qualification | JEDEC (Industrial market) | β |
| RoHS Status | Compliant | Compliant (per PBF suffix) |
| Lead-Free (PBF suffix) | Yes | Yes |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Drain-Source Voltage (V_DS) | β | 55 V |
| Continuous Drain Current (I_D) at Tc | β | 89 A |
| Pulsed Drain Current | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc | β | 170 W |
| On-Resistance R_DS(on) | β | 10 mOhm (typical, V_GS = 5 V) |
| Gate Threshold V_GS(th) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | β | 65.3 nC |
| Maximum Junction Temperature | β | 175 C |
| Gate Drive Level | β | Logic-level |
| Avalanche Rated | β | Yes (ruggedized single-pulse avalanche) |