IRF1310NPBF vs IRF540ZPBF Comparison

Detailed side-by-side comparison of IRF1310NPBF by Infineon and IRF540ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF1310NPBF IRF540ZPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.98 $0.62
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at TC=25C 42 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM value] β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V 36 mOhm β€”
Total Gate Charge (Qg) 73.3 nC β€”
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs value] β€”
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd value] β€”
Power Dissipation (PD) at TC=25C 160 W β€”
Maximum Junction Temperature 175 C 175 C
Operating Temperature Range -55 C to +175 C β€”
Package TO-220AB (through-hole) TO-220AB (through-hole, 3-lead)
Mounting Type Through Hole Through Hole
Technology HEXFET HEXFET Power MOSFET (N-Channel DMOS)
RoHS Status Compliant (PBF suffix) Compliant
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Part Number β€” IRF540ZPBF
Drain-Source Voltage (V_DS) β€” 100 V
Continuous Drain Current (I_D) at T_C=25C β€” 36 A
Pulsed Drain Current (I_DM) β€” [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (V_GS) max β€” [DATA_NEEDED: V_GS maximum rating]
Gate Threshold Voltage (V_GS(th)) β€” [DATA_NEEDED: V_GS(th) typical]
On-Resistance R_DS(on) max at V_GS=10V β€” 26.5 mOhm
Total Gate Charge (Q_g) β€” 42 nC
Power Dissipation (P_D) at T_C=25C β€” 92 W
Operating Junction Temperature Range β€” -55 C to +175 C
Pin Count β€” 3 (Gate, Drain, Source)
Lead-Free β€” Yes
Automotive Qualified β€” Yes (per datasheet description)

Datasheets & Resources

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