IRF1310NSTRLPBF vs IPB019N08N3GATMA1 Comparison
Detailed side-by-side comparison of IRF1310NSTRLPBF by Infineon and IPB019N08N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB019N08N3GATMA1 - 80V 180A 1.9mΞ© OptiMOS 3 N-MOSFET | Infineon
IPB019N08N3GATMA1 β ActiveSpecification Comparison
| Parameter | IRF1310NSTRLPBF | IPB019N08N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.84 | $2.74 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25C | 42 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | 73.3 nC | β |
| Power Dissipation (PD) at TC=25C | 160 W | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Operating Temperature Range | -55C to +175C | -55 Β°C to +175 Β°C |
| Package | D2PAK (TO-263AB) | PG-TO263-7 (D2PAK-6, surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR MOSFET (HEXFET) | MOSFET (Metal Oxide) |
| Built-in Diode | Yes (intrinsic body diode) | β |
| Lead-Free / RoHS | Yes (PBF suffix) | β |
| Configuration | Single with built-in diode | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 3 |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (Vdss) | β | 80 V |
| Continuous Drain Current (Id) @ Tc=25Β°C | β | 180 A |
| Power Dissipation (Pd) @ Tc=25Β°C | β | 300 W |
| On-Resistance RDS(on) Max @ VGS=10V | β | 1.9 mΞ© |
| Gate Threshold Voltage (Vgs(th)) | β | 3.5 V |
| Drive Voltage (Rds On Max) | β | 6 V, 10 V |
| Total Gate Charge (Qg) @ VGS=10V | β | 206 nC |
| Input Capacitance (Ciss) | β | 14.2 nF |
| Output Capacitance (Coss) | β | 3.84 nF |
| Reverse Transfer Capacitance (Crss) | β | 3.84 nF |
| RoHS Status | β | Compliant |