IRF1310NSTRLPBF vs IPTC039N15NM5ATMA1 Comparison

Detailed side-by-side comparison of IRF1310NSTRLPBF by Infineon and IPTC039N15NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF1310NSTRLPBF IRF1310NSTRLPBF - 100V 42A N-Channel MOSFET | Infineon D2PAK

IRF1310NSTRLPBF - 100V 42A N-Channel MOSFET | Infineon D2PAK

IRF1310NSTRLPBF βœ“ Active

Specification Comparison

Parameter IRF1310NSTRLPBF IPTC039N15NM5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.84 $4.05
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 150 V
Continuous Drain Current (ID) at TC=25C 42 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance RDS(on) max at VGS=10V 36 mOhm β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) 73.3 nC β€”
Power Dissipation (PD) at TC=25C 160 W β€”
Power Dissipation (PD) at TA=25C 3.8 W β€”
Operating Temperature Range -55C to +175C β€”
Package D2PAK (TO-263AB) PG-HDSOP-16-2 (top-side cooled)
Mounting Type Surface Mount Surface Mount
Technology IR MOSFET (HEXFET) OptiMOS 5 trench
Built-in Diode Yes (intrinsic body diode) β€”
Lead-Free / RoHS Yes (PBF suffix) β€”
Configuration Single with built-in diode β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 5
Continuous Drain Current (ID) at Ta β€” 21 A
Continuous Drain Current (ID) at Tc β€” 190 A
Power Dissipation (PD) at Ta β€” 3.8 W
Power Dissipation (PD) at Tc β€” 319 W
On-Resistance RDS(on) typical β€” 3.9 mOhm
Gate Charge Qg typical β€” 74 nC
Maximum Gate-Source Voltage (VGS) β€” 20 V
Operating Temperature β€” -55 C to +175 C (junction)
Cooling β€” Top-side cooled (case above PCB)
RoHS Status β€” Compliant

Datasheets & Resources

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