IRF1310NSTRLPBF vs IRFB4110PBF Comparison
Detailed side-by-side comparison of IRF1310NSTRLPBF by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF1310NSTRLPBF | IRFB4110PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.84 | $1.55 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 42 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | 4.5 mΞ© |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | 73.3 nC | β |
| Power Dissipation (PD) at TC=25C | 160 W | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Operating Temperature Range | -55C to +175C | β |
| Package | D2PAK (TO-263AB) | TO-220AB (through-hole) |
| Mounting Type | Surface Mount | Through Hole |
| Technology | IR MOSFET (HEXFET) | HEXFET (planar DMOS) |
| Built-in Diode | Yes (intrinsic body diode) | β |
| Lead-Free / RoHS | Yes (PBF suffix) | β |
| Configuration | Single with built-in diode | β |
| Continuous Drain Current (ID) at TC=25Β°C | β | 120 A (bond-wire limited) |
| On-Resistance RDS(on) typ at VGS=10V | β | 3.7 mΞ© |
| Power Dissipation (PD) at TC=25Β°C | β | 370 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| RoHS Status | β | Compliant (Pb-free suffix) |
| Lead-Free | β | Yes (PBF suffix denotes Pb-free) |