IRF1310NSTRLPBF vs IRFB4310PBF Comparison
Detailed side-by-side comparison of IRF1310NSTRLPBF by Infineon and IRFB4310PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF1310NSTRLPBF | IRFB4310PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.84 | $1.95 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 42 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | 7 mOhm |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: VGS maximum rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | 73.3 nC | 170 nC |
| Power Dissipation (PD) at TC=25C | 160 W | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Operating Temperature Range | -55C to +175C | -55C to +175C (junction) |
| Package | D2PAK (TO-263AB) | TO-220AB (through-hole) |
| Mounting Type | Surface Mount | Through Hole |
| Technology | IR MOSFET (HEXFET) | HEXFET (IR MOSFET) |
| Built-in Diode | Yes (intrinsic body diode) | β |
| Lead-Free / RoHS | Yes (PBF suffix) | β |
| Configuration | Single with built-in diode | β |
| Continuous Drain Current (ID) at Tc=25C | β | 130 A |
| Continuous Drain Current (ID) at Tc=100C | β | [DATA_NEEDED: ID at Tc=100C] |
| Maximum Power Dissition (PD) at Tc=25C | β | 300 W |
| On-Resistance RDS(on) typical at VGS=10V | β | 5.6 mOhm |
| Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th) typical] |
| Avalanche Rated | β | Yes |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes (Pb-free PBF suffix) |