IRF1310NSTRLPBF vs IRL2910STRLPBF Comparison
Detailed side-by-side comparison of IRF1310NSTRLPBF by Infineon and IRL2910STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRL2910STRLPBF - 100V 55A Logic-Level N-Channel MOSFET | Infineon
IRL2910STRLPBF β ActiveSpecification Comparison
| Parameter | IRF1310NSTRLPBF | IRL2910STRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.84 | $0.98 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 42 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | 73.3 nC | 93.3 nC |
| Power Dissipation (PD) at TC=25C | 160 W | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Operating Temperature Range | -55C to +175C | -55C to +175C (TJ) |
| Package | D2PAK (TO-263AB) | D2PAK (TO-263) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR MOSFET (HEXFET) | HEXFET (Infineon/IR) |
| Built-in Diode | Yes (intrinsic body diode) | β |
| Lead-Free / RoHS | Yes (PBF suffix) | β |
| Configuration | Single with built-in diode | β |
| Continuous Drain Current (ID) @ TC=25C | β | 55 A |
| On-Resistance Rds(on) max @ VGS=10V | β | 26 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | Logic-level (1V-2V) |
| Power Dissipation @ TA=25C | β | 3.8 W |
| Power Dissipation @ TC=25C | β | 200 W |
| RoHS Status | β | Compliant |
| Halogen Free | β | Compliant (per GlobalSpec) |