IRF1310NSTRLPBF vs IRLS3036TRLPBF Comparison

Detailed side-by-side comparison of IRF1310NSTRLPBF by Infineon and IRLS3036TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF1310NSTRLPBF IRF1310NSTRLPBF - 100V 42A N-Channel MOSFET | Infineon D2PAK

IRF1310NSTRLPBF - 100V 42A N-Channel MOSFET | Infineon D2PAK

IRF1310NSTRLPBF βœ“ Active
Infineon
IRLS3036TRLPBF IRLS3036TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRLS3036TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon

IRLS3036TRLPBF βœ“ Active

Specification Comparison

Parameter IRF1310NSTRLPBF IRLS3036TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.84 $1.39
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at TC=25C 42 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance RDS(on) max at VGS=10V 36 mOhm β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) 73.3 nC β€”
Power Dissipation (PD) at TC=25C 160 W β€”
Power Dissipation (PD) at TA=25C 3.8 W β€”
Operating Temperature Range -55C to +175C -55C to +175C
Package D2PAK (TO-263AB) D2PAK (TO-263), surface mount
Mounting Type Surface Mount Surface Mount
Technology IR MOSFET (HEXFET) IR HEXFET (planar DMOS)
Built-in Diode Yes (intrinsic body diode) β€”
Lead-Free / RoHS Yes (PBF suffix) β€”
Configuration Single with built-in diode β€”
Polarity β€” N-Channel
Drain-Source Voltage (Vdss) β€” 60 V
Continuous Drain Current (Id) at Tc=25C β€” 270 A
Continuous Drain Current (Id) at Tc=100C β€” 195 A
Pulsed Drain Current (Idm) β€” 1100 A
Rds(on) max @ Vgs=10V β€” 1.9 mOhm
Gate-Source Threshold Voltage (Vgs(th)) β€” Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max]
Total Gate Charge (Qg) typ β€” 91 nC
Gate-Source Voltage (Vgs) max β€” [DATA_NEEDED: Vgs max +/- V]
Power Dissipation (Pd) at Tc=25C β€” 380 W
MSL Level β€” 1
RoHS Status β€” Compliant (PBF suffix)
Lead-Free β€” Yes (PBF suffix)
Integrated Body Diode β€” Yes (avalanche rated)

Datasheets & Resources

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