IRF1405PBF vs IRFB4110PBF Comparison
Detailed side-by-side comparison of IRF1405PBF by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF1405PBF | IRFB4110PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $1.55 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number Suffix | PbF (lead-free, RoHS compliant) | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (Stripe Planar cell structure) | HEXFET (planar DMOS) |
| Drain-Source Voltage (V_DS) | 55 V | β |
| Continuous Drain Current (I_D, Tc=25C) | 169 A | β |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current rating] | β |
| Maximum Power Dissipation (P_D, Tc=25C) | 330 W | β |
| R_DS(on) Maximum | 5.3 mOhm @ V_GS = 10 V | β |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 4.0 V | β |
| Maximum Gate-Source Voltage (V_GS) | [DATA_NEEDED: maximum V_GS rating] | β |
| Operating Junction Temperature (T_J max) | 175 C | β |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | β |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Qualification | JEDEC qualified, optimized for switching below 100 kHz | β |
| RoHS Status | PbF suffix indicates lead-free / RoHS compliant | Compliant (Pb-free suffix) |
| Single Pulse Avalanche Energy (E_AS) | [DATA_NEEDED: avalanche energy rating] | β |
| Thermal Resistance Junction-to-Case (R_theta_JC) | [DATA_NEEDED: thermal resistance R_theta_JC] | β |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 120 A (bond-wire limited) |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) max at VGS=10V | β | 4.5 mΞ© |
| On-Resistance RDS(on) typ at VGS=10V | β | 3.7 mΞ© |
| Power Dissipation (PD) at TC=25Β°C | β | 370 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Lead-Free | β | Yes (PBF suffix denotes Pb-free) |