IRF1405PBF vs IRFZ34NPBF Comparison
Detailed side-by-side comparison of IRF1405PBF by Infineon and IRFZ34NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF1405PBF | IRFZ34NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $0.61 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | PbF (lead-free, RoHS compliant) | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | HEXFET (Stripe Planar cell structure) | HEXFET (Planar DMOS, 5th generation) |
| Drain-Source Voltage (V_DS) | 55 V | β |
| Continuous Drain Current (I_D, Tc=25C) | 169 A | β |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current rating] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (P_D, Tc=25C) | 330 W | β |
| R_DS(on) Maximum | 5.3 mOhm @ V_GS = 10 V | β |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 4.0 V | β |
| Maximum Gate-Source Voltage (V_GS) | [DATA_NEEDED: maximum V_GS rating] | β |
| Operating Junction Temperature (T_J max) | 175 C | β |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | β |
| Package | TO-220AB (through-hole) | TO-220AB (3-pin + tab, through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Qualification | JEDEC qualified, optimized for switching below 100 kHz | JEDEC standard |
| RoHS Status | PbF suffix indicates lead-free / RoHS compliant | Compliant |
| Single Pulse Avalanche Energy (E_AS) | [DATA_NEEDED: avalanche energy rating] | β |
| Thermal Resistance Junction-to-Case (R_theta_JC) | [DATA_NEEDED: thermal resistance R_theta_JC] | β |
| Part Status | β | Active |
| FET Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V_DSS) | β | 55 V |
| Continuous Drain Current (I_D) at Tc=25C | β | 29 A |
| Power Dissipation (P_D) at Tc=25C | β | 68 W |
| On-Resistance R_DS(on) max at V_GS=10V | β | 40 mOhm |
| Gate Charge (Q_g) typ | β | 22.7 nC |
| Gate Threshold Voltage V_GS(th) typ | β | [DATA_NEEDED: gate threshold voltage] |
| Input Capacitance (C_iss) typ | β | [DATA_NEEDED: input capacitance] |
| Operating Temperature Range | β | -55 C to +175 C |
| Maximum Junction Temperature | β | 175 C |
| Lead-Free Status | β | Yes (Pb-free, RoHS compliant) |
| Configuration | β | Single N-Channel, 3-pin (3+tab) |