IRF1407PBF vs IRFB4110PBF Comparison

Detailed side-by-side comparison of IRF1407PBF by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF1407PBF IRFB4110PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.86 $1.55
FET Type N-Channel β€”
Technology HEXFET (stripe-planar MOSFET) HEXFET (planar DMOS)
Drain-Source Voltage (VDS) 75 V 100 V
Continuous Drain Current (ID) at TC=25C 130 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25C 330 W β€”
On-Resistance RDS(on) at VGS=10V 7.8 mOhm (typical) β€”
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS threshold typical/min/max] β€”
Gate Charge (Qg) 160 nC (typical) β€”
Maximum Junction Temperature 175 C β€”
Operating Temperature Range -55 C to +175 C β€”
Package TO-220AB (through-hole, 3 leads) TO-220AB (through-hole)
Mounting Type Through Hole Through Hole
Lead-Free / RoHS Lead-free, RoHS compliant (PBF suffix) β€”
Avalanche Rating Repetitive avalanche rated β€”
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at TC=25Β°C β€” 120 A (bond-wire limited)
Gate-Source Voltage (VGS) max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V β€” 4.5 mΞ©
On-Resistance RDS(on) typ at VGS=10V β€” 3.7 mΞ©
Power Dissipation (PD) at TC=25Β°C β€” 370 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
RoHS Status β€” Compliant (Pb-free suffix)
Lead-Free β€” Yes (PBF suffix denotes Pb-free)

Datasheets & Resources

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