IRF1407PBF vs IRFB4310PBF Comparison

Detailed side-by-side comparison of IRF1407PBF by Infineon and IRFB4310PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF1407PBF IRFB4310PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.86 $1.95
FET Type N-Channel β€”
Technology HEXFET (stripe-planar MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 75 V 100 V
Continuous Drain Current (ID) at TC=25C 130 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25C 330 W β€”
On-Resistance RDS(on) at VGS=10V 7.8 mOhm (typical) β€”
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS threshold typical/min/max] β€”
Gate Charge (Qg) 160 nC (typical) β€”
Maximum Junction Temperature 175 C β€”
Operating Temperature Range -55 C to +175 C -55C to +175C (junction)
Package TO-220AB (through-hole, 3 leads) TO-220AB (through-hole)
Mounting Type Through Hole Through Hole
Lead-Free / RoHS Lead-free, RoHS compliant (PBF suffix) β€”
Avalanche Rating Repetitive avalanche rated β€”
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25C β€” 130 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
Maximum Power Dissition (PD) at Tc=25C β€” 300 W
On-Resistance RDS(on) max at VGS=10V β€” 7 mOhm
On-Resistance RDS(on) typical at VGS=10V β€” 5.6 mOhm
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS maximum rating]
Total Gate Charge (Qg) β€” 170 nC
Threshold Voltage VGS(th) typ β€” [DATA_NEEDED: VGS(th) typical]
Avalanche Rated β€” Yes
RoHS Status β€” Compliant
Lead-Free β€” Yes (Pb-free PBF suffix)

Datasheets & Resources

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