IRF1407PBF vs IRFB4410PBF Comparison

Detailed side-by-side comparison of IRF1407PBF by Infineon and IRFB4410PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF1407PBF IRFB4410PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.86 $1.15
FET Type N-Channel N-Channel
Technology HEXFET (stripe-planar MOSFET) MOSFET (Metal Oxide) - HEXFET
Drain-Source Voltage (VDS) 75 V β€”
Continuous Drain Current (ID) at TC=25C 130 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Power Dissipation (PD) at TC=25C 330 W β€”
On-Resistance RDS(on) at VGS=10V 7.8 mOhm (typical) β€”
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS threshold typical/min/max] β€”
Gate Charge (Qg) 160 nC (typical) β€”
Maximum Junction Temperature 175 C β€”
Operating Temperature Range -55 C to +175 C -55C to +175C (Tj)
Package TO-220AB (through-hole, 3 leads) TO-220AB (through-hole)
Mounting Type Through Hole Through Hole
Lead-Free / RoHS Lead-free, RoHS compliant (PBF suffix) β€”
Avalanche Rating Repetitive avalanche rated β€”
Drain-to-Source Voltage (Vdss) β€” 100 V
Continuous Drain Current (Id) @ 25C β€” 88 A (Tc)
Continuous Drain Current (Id) @ 100C β€” [DATA_NEEDED: Id @ 100C]
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: Idm pulse]
Gate-to-Source Voltage (Vgs) β€” [DATA_NEEDED: Vgs max]
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th)]
RDS(on) max @ VGS=10V β€” 10 mOhm
Total Gate Charge (Qg) β€” 120 nC
Power Dissipation (Pd) β€” 200 W (Tc)
Avalanche Energy Rating β€” Single-pulse avalanche rated
MSL Level β€” 1 (unlimited)
RoHS Status β€” Compliant (Pb-free PBF suffix)
Series β€” HEXFET

Datasheets & Resources

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