IRF150P220AKMA1 vs IRFP250MPBF Comparison

Detailed side-by-side comparison of IRF150P220AKMA1 by Infineon and IRFP250MPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF150P220AKMA1 IRFP250MPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.55 $2.55
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRF150P220AKMA1 IRFP250MPBF
Technology StrongIRFET HEXFET (IR MOSFET)
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS max) 150 V β€”
Continuous Drain Current (ID) at Tc=25C 203 A β€”
On-Resistance (RDS(on) max) at VGS=10V 2.7 mOhm β€”
Gate-Source Voltage (VGS max) [DATA_NEEDED: VGS max] β€”
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typ] β€”
Power Dissipation (Pd) at Tc=25C 556 W 214 W
Power Dissipation (Pd) at Ta=25C 3.8 W β€”
Operating Temperature Range -55C to +175C β€”
Package TO-247-3 (PG-TO247-3) β€”
Mounting Type Through Hole Through Hole
Terminal Finish Tin (Sn) β€”
JESD-609 Code e3 β€”
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Drain-Source Voltage (Vds) β€” 200 V
Continuous Drain Current (Id) at Tc=25C β€” 30 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current value]
Static Drain-Source On-Resistance (RDS(on)) β€” 75 mOhm max @ Vgs=10V
Gate-Source Threshold Voltage (Vgs(th)) β€” 4 V (typ)
Total Gate Charge (Qg) β€” 82 nC
Operating Junction Temperature β€” -55C to +175C
Package / Case β€” TO-247AC (3-pin + tab)
Number of Pins β€” 3
Avalanche Rated β€” Yes
MSL Level β€” 1 (unlimited)

Datasheets & Resources

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