IRF2907ZSTRLPBF vs IRF540NSTRLPBF Comparison

Detailed side-by-side comparison of IRF2907ZSTRLPBF by Infineon and IRF540NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF540NSTRLPBF IRF540NSTRLPBF - 100V 33A N-Channel MOSFET D2PAK | Infineon

IRF540NSTRLPBF - 100V 33A N-Channel MOSFET D2PAK | Infineon

IRF540NSTRLPBF βœ“ Active

Specification Comparison

Parameter IRF2907ZSTRLPBF IRF540NSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $0.74
Transistor Polarity N-Channel β€”
Drain-Source Voltage V(BR)DSS 75 V β€”
Continuous Drain Current (TC = 25 C) 170 A β€”
Continuous Drain Current (TC = 100 C) [DATA_NEEDED: ID at TC=100C] β€”
RDS(on) max at VGS = 10 V 4.5 mOhm β€”
RDS(on) typical at VGS = 10 V 3.5 mOhm β€”
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V β€”
Maximum Power Dissipation (TC = 25 C) 300 W β€”
Operating Junction Temperature -55 C to +175 C β€”
Technology IR HEXFET / IR MOSFET HEXFET (IR MOSFET)
Package D2PAK (TO-263AB) surface mount D2PAK (TO-263), surface mount
Pin Count 3 (Gate, Drain, Source) β€”
Mounting Type Surface Mount (SMD) Surface Mount
Packaging Tape and Reel (left orientation) Tape & Reel (13-inch reel)
Lead-Free Yes (PBF suffix) β€”
RoHS Status Compliant Compliant (Pb-free)
Avalanche Rating Repetitive avalanche allowed up to TJ(max) β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (Vdss) β€” 100 V
Continuous Drain Current (Id) at Tc=25C β€” 33 A
Pulsed Drain Current (Idm) β€” 110 A (per datasheet pulse curve)
On-Resistance Rds(on) max at Vgs=10V β€” 44 mOhm
Gate Threshold Voltage Vgs(th) β€” 2.0 V to 4.0 V
Total Gate Charge Qg β€” 47.3 nC (typical)
Power Dissipation (Pd) at Tc=25C β€” 130 W
Operating Temperature Range β€” -55 C to +175 C
Avalanche Energy Rated β€” Yes (HEXFET ruggedized)

Datasheets & Resources

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