IRF3710STRLPBF vs IRF4905STRLPBF Comparison

Detailed side-by-side comparison of IRF3710STRLPBF by Infineon and IRF4905STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF3710STRLPBF IRF4905STRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.23 $0.95
FET Type N-Channel P-Channel
Technology HEXFET / IR MOSFET (planar) HEXFET (Planar)
Drain-Source Voltage (VDS) 100 V -55 V
Continuous Drain Current (ID, Tc=25 C) 57 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] -260 A
On-Resistance RDS(on) max 23 mOhm β€”
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] β€”
Total Gate Charge (Qg) 86.7 nC 120 nC
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Power Dissipation (PD, Tc=25 C) 200 W β€”
Operating Temperature Range -55 C to +175 C -55C to +175C
Package D2PAK (TO-263), surface mount D2PAK (TO-263)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (Pb-free) Compliant
Lead-Free Yes Yes
Tape & Reel Orientation TRL (left) β€”
Continuous Drain Current (ID) at Tc=25C β€” -74 A
Gate-Source Voltage (VGS) max β€” Β±20 V
On-Resistance RDS(on) at VGS=-10V β€” 20 mOhm
Power Dissipation (PD) at Tc=25C β€” 170 W
MSL Level β€” 1

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