IRF3710STRLPBF vs IRFB4310PBF Comparison

Detailed side-by-side comparison of IRF3710STRLPBF by Infineon and IRFB4310PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF3710STRLPBF IRFB4310PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.23 $1.95
FET Type N-Channel β€”
Technology HEXFET / IR MOSFET (planar) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc=25 C) 57 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max 23 mOhm β€”
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] β€”
Total Gate Charge (Qg) 86.7 nC 170 nC
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Power Dissipation (PD, Tc=25 C) 200 W β€”
Operating Temperature Range -55 C to +175 C -55C to +175C (junction)
Package D2PAK (TO-263), surface mount TO-220AB (through-hole)
Mounting Type Surface Mount Through Hole
RoHS Status Compliant (Pb-free) Compliant
Lead-Free Yes Yes (Pb-free PBF suffix)
Tape & Reel Orientation TRL (left) β€”
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25C β€” 130 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
Maximum Power Dissition (PD) at Tc=25C β€” 300 W
On-Resistance RDS(on) max at VGS=10V β€” 7 mOhm
On-Resistance RDS(on) typical at VGS=10V β€” 5.6 mOhm
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS maximum rating]
Threshold Voltage VGS(th) typ β€” [DATA_NEEDED: VGS(th) typical]
Avalanche Rated β€” Yes

Datasheets & Resources

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