IRF3710STRLPBF vs IRFP250MPBF Comparison

Detailed side-by-side comparison of IRF3710STRLPBF by Infineon and IRFP250MPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF3710STRLPBF IRFP250MPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.23 $2.55
FET Type N-Channel β€”
Technology HEXFET / IR MOSFET (planar) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID, Tc=25 C) 57 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance RDS(on) max 23 mOhm β€”
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] β€”
Total Gate Charge (Qg) 86.7 nC 82 nC
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Power Dissipation (PD, Tc=25 C) 200 W β€”
Operating Temperature Range -55 C to +175 C β€”
Package D2PAK (TO-263), surface mount β€”
Mounting Type Surface Mount Through Hole
RoHS Status Compliant (Pb-free) Compliant
Lead-Free Yes Yes
Tape & Reel Orientation TRL (left) β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Part Number β€” IRFP250MPBF
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (Vds) β€” 200 V
Continuous Drain Current (Id) at Tc=25C β€” 30 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current value]
Static Drain-Source On-Resistance (RDS(on)) β€” 75 mOhm max @ Vgs=10V
Gate-Source Threshold Voltage (Vgs(th)) β€” 4 V (typ)
Power Dissipation (Pd) at Tc=25C β€” 214 W
Operating Junction Temperature β€” -55C to +175C
Package / Case β€” TO-247AC (3-pin + tab)
Number of Pins β€” 3
Avalanche Rated β€” Yes
MSL Level β€” 1 (unlimited)

Datasheets & Resources

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