IRF4905LPBF vs IPB019N08N3GATMA1 Comparison
Detailed side-by-side comparison of IRF4905LPBF by Infineon and IPB019N08N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRF4905LPBF
IRF4905LPBF - P-Ch -55V 74A 20mOhm HEXFET MOSFET | Infineon
IRF4905LPBF β ActiveInfineon
IPB019N08N3GATMA1 - 80V 180A 1.9mΞ© OptiMOS 3 N-MOSFET | Infineon
IPB019N08N3GATMA1 β ActiveSpecification Comparison
| Parameter | IRF4905LPBF | IPB019N08N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $2.74 |
| Polarity | P-Channel | β |
| Drain-Source Voltage (Vds) | -55 V | β |
| Continuous Drain Current (Id) @ Tc=25C | -74 A | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance Rds(on) max @ Vgs=-10V | 20 mOhm | β |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical] | β |
| Gate-Source Voltage (Vgs) max | Β±20 V | β |
| Total Power Dissipation (Ptot) @ Tc=25C | 200 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value] | β |
| Rise Time (tr) typ | [DATA_NEEDED: rise time] | β |
| Fall Time (tf) typ | [DATA_NEEDED: fall time] | β |
| Package | TO-262 (I2PAK), through-hole, 3-pin | PG-TO263-7 (D2PAK-6, surface mount) |
| Technology | HEXFET (IR MOSFET) | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PbF suffix) | β |
| Avalanche Rated | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 3 |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (Vdss) | β | 80 V |
| Continuous Drain Current (Id) @ Tc=25Β°C | β | 180 A |
| Power Dissipation (Pd) @ Tc=25Β°C | β | 300 W |
| On-Resistance RDS(on) Max @ VGS=10V | β | 1.9 mΞ© |
| Gate Threshold Voltage (Vgs(th)) | β | 3.5 V |
| Drive Voltage (Rds On Max) | β | 6 V, 10 V |
| Total Gate Charge (Qg) @ VGS=10V | β | 206 nC |
| Input Capacitance (Ciss) | β | 14.2 nF |
| Output Capacitance (Coss) | β | 3.84 nF |
| Reverse Transfer Capacitance (Crss) | β | 3.84 nF |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C |
| RoHS Status | β | Compliant |