IRF4905LPBF vs IRF4905STRLPBF Comparison

Detailed side-by-side comparison of IRF4905LPBF by Infineon and IRF4905STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF4905LPBF

IRF4905LPBF - P-Ch -55V 74A 20mOhm HEXFET MOSFET | Infineon

IRF4905LPBF βœ“ Active

Specification Comparison

Parameter IRF4905LPBF IRF4905STRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.98 $0.95
Polarity P-Channel β€”
Drain-Source Voltage (Vds) -55 V β€”
Continuous Drain Current (Id) @ Tc=25C -74 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance Rds(on) max @ Vgs=-10V 20 mOhm β€”
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical] β€”
Gate-Source Voltage (Vgs) max Β±20 V β€”
Total Power Dissipation (Ptot) @ Tc=25C 200 W β€”
Operating Junction Temperature -55C to +150C β€”
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] β€”
Rise Time (tr) typ [DATA_NEEDED: rise time] β€”
Fall Time (tf) typ [DATA_NEEDED: fall time] β€”
Package TO-262 (I2PAK), through-hole, 3-pin D2PAK (TO-263)
Technology HEXFET (IR MOSFET) HEXFET (Planar)
Mounting Type Through Hole Surface Mount
Lead-Free / RoHS Yes (PbF suffix) β€”
Avalanche Rated Yes β€”
FET Type β€” P-Channel
Drain-Source Voltage (VDS) β€” -55 V
Continuous Drain Current (ID) at Tc=25C β€” -74 A
Pulsed Drain Current (IDM) β€” -260 A
Gate-Source Voltage (VGS) max β€” Β±20 V
On-Resistance RDS(on) at VGS=-10V β€” 20 mOhm
Total Gate Charge (Qg) β€” 120 nC
Power Dissipation (PD) at Tc=25C β€” 170 W
Operating Temperature Range β€” -55C to +175C
MSL Level β€” 1
RoHS Status β€” Compliant
Lead-Free β€” Yes

Datasheets & Resources

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