IRF4905LPBF vs IRFB3306PBF Comparison

Detailed side-by-side comparison of IRF4905LPBF by Infineon and IRFB3306PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF4905LPBF

IRF4905LPBF - P-Ch -55V 74A 20mOhm HEXFET MOSFET | Infineon

IRF4905LPBF βœ“ Active

Specification Comparison

Parameter IRF4905LPBF IRFB3306PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.98 $1.05
Polarity P-Channel β€”
Drain-Source Voltage (Vds) -55 V β€”
Continuous Drain Current (Id) @ Tc=25C -74 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance Rds(on) max @ Vgs=-10V 20 mOhm β€”
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical] β€”
Gate-Source Voltage (Vgs) max Β±20 V Β±20 V
Total Power Dissipation (Ptot) @ Tc=25C 200 W β€”
Operating Junction Temperature -55C to +150C -55Β°C to +175Β°C
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value] β€”
Rise Time (tr) typ [DATA_NEEDED: rise time] β€”
Fall Time (tf) typ [DATA_NEEDED: fall time] β€”
Package TO-262 (I2PAK), through-hole, 3-pin TO-220AB (through-hole)
Technology HEXFET (IR MOSFET) IR HEXFET (MOSFET)
Mounting Type Through Hole Through Hole
Lead-Free / RoHS Yes (PbF suffix) β€”
Avalanche Rated Yes Yes
FET Type β€” N-Channel
Drain-Source Voltage (Vdss) β€” 60 V
Continuous Drain Current (Id) at Tc=25Β°C β€” 120 A
Rds(on) max @ Vgs=10V β€” 4.2 mΞ©
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) typical value]
Total Gate Charge (Qg) typ β€” [DATA_NEEDED: total gate charge Qg]
Gate-Drain Charge (Qgd) typ β€” 26 nC (nominal)
Power Dissipation (Pd) at Tc=25Β°C β€” 230 W
RoHS / Lead-Free (PbF) β€” Yes (PbF suffix indicates lead-free, RoHS compliant)
Body Diode β€” Intrinsic (avalanche-rated)

Datasheets & Resources

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