IRF4905PBF vs IRF5210PBF Comparison
Detailed side-by-side comparison of IRF4905PBF by Infineon and IRF5210PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF4905PBF | IRF5210PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $2.52 |
| FET Type | P-Channel | β |
| Technology | HEXFET (IR MOSFET) | HEXFET (Fifth Generation) |
| Drain-Source Voltage (VDS) | -55 V | β |
| Continuous Drain Current (ID) at TC | -74 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (PD) at TC | 200 W | β |
| On-Resistance RDS(on) max at VGS=-10V | 20 mΞ© | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | β |
| Total Gate Charge (Qg) | 120 nC | 120 nC |
| Operating Temperature Range | -55 Β°C to +175 Β°C (junction) | -55 C to +175 C (junction) |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Pin Configuration | Gate - Drain - Source (left to right) | Gate / Drain (tab) / Source (G-D-S, front view) |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free, RoHS compliant) | Yes (PBF suffix = lead-free) |
| MSL Level | 1 (not moisture-sensitive for TO-220) | β |
| Transistor Type | β | P-Channel MOSFET |
| Drain-Source Voltage (Vds) | β | -100 V |
| Continuous Drain Current (Id) at Tc | β | -40 A |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Threshold Voltage (Vgs(th)) | β | -2 V to -4 V (typical -2 V) |
| On-Resistance Rds(on) at Vgs=-10V | β | 60 milliohms |
| Power Dissipation (Pd) at Tc | β | 200 W |
| Tab Connection | β | Electrically tied to Drain |